sp8m6 transistors rev.c 1/5 4v drive nch+pch mosfet sp8m6 structure dimensions (unit : mm) silicon n-channel / p-channel mosfet features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). application power switching, dc / dc converter. packaging specifications equivalent circuit packagecode taping basic ordering unit (pieces) sp8m6 tb 2500 type absolute maximum ratings (ta=25 c) parameter v v dss symbol 30 v v gss a i d a i dp a i s a i sp w p d c tch c tstg nchannel pchannel limits unit drain-source voltagegate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed 20 5.0 20 1.6 20 2 150 ? 55 to + 150 ? 30 20 3.5 14 ? 1.6 ? 14 ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 thermal resistance c / w rth (ch-a) 62.5 parameter symbol limits unit channel to ambient ? ? mounted on a ceramic board. ? a protection diode is included between the gate andthe source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1) tr1 (nch) source(2) tr1 (nch) gate (3) tr2 (pch) source (4) tr2 (pch) gate (5) tr2 (pch) drain (6) tr2 (pch) drain (7) tr1 (nch) drain (8) tr1 (nch) drain (1) (2) (3) (4) (8) (7) (6) (5) ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode each lead has same dimensions sop8 sp8m6fr a aec-q101 qualified fra fra downloaded from: http:///
sp8m6 transistors rev.c 2/5 n-ch electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 a typ. max. unit conditions v (br) dss 30 ?? v i dss ?? 1 a v gs (th) 1.0 ? 2.5 v ? 36 51 r ds (on) ? 52 73 m ? 58 82 3.0 ?? s c iss ? 230 ? pf c oss ? 8050 ? pf c rss ? 6 ? pf t d (on) ? 8 ? ns t r ? 22 ? ns t d (off) ? 5 ? ns t f ? 3.9 ? ns q g ? 1.1 ? nc q gs ? 1.4 ? nc q gd ?? nc ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltage static drain-source on-stateresistance forward transfer admittanceinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed v gs = 20v, v ds = 0v v dd 15v i d = 1ma, v gs = 0v v ds = 30v, v gs = 0v v ds = 10v, i d = 1ma i d = 5.0a, v gs = 10v i d = 5.0a, v gs = 4.5v i d = 5.0a, v gs = 4v i d = 5.0a, v ds = 10v v ds = 10v v gs = 0v f = 1mhz v gs = 10v r l = 6.0 r g = 10 v gs = 5v i d = 5.0a i d = 2.5a, v dd 15v body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 6.4a, v gs = 0v parameter symbol min. typ. max. unit conditions ? forward voltage ? pulsed sp8m6fr a downloaded from: http:///
sp8m6 transistors rev.c 3/5 p-ch electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltage static drain-source on-stateresistance forward transfer admittanceinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 a ? 30 ?? v ??? 1 a ? 1.0 ?? 2.5 v ? 65 90 ? 100 140 m ? 120 165 1.8 ?? s ? 490 ? pf ? 110 75 ? pf ? 10 ? pf ? 15 ? ns ? 35 ? ns ? 10 ? ns ? 5.5 ? ns ? 1.5 ? nc ? 2.0 ? nc ?? nc v gs = 20v, v ds = 0v v dd ? 15v i d = ? 1ma, v gs = 0v v ds = ? 30v, v gs = 0v v ds = ? 10v, i d = ? 1ma i d = ? 3.5a, v gs = ? 10v i d = ? 1.75a, v gs = ? 4.5v i d = ? 1.75a, v gs = ? 4.0v i d = ? 1.75a, v ds = ? 10v v ds = ? 10v v gs = 0v f = 1mhz v gs = ? 10v r l = 8.57 r g = 10 v gs = ? 5v i d = ? 3.5a i d = ? 1.75a, v dd ? 15v body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 1.0a, v gs = 0v parameter symbol min. typ. max. unit conditions forward voltage sp8m6fr a downloaded from: http:///
sp8m6 transistors rev.c 4/5 n-ch electrical characteristic curves 100 1000 10 0.01 0.1 1 10 100 drain-source voltage : v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = 15v v gs = 10v r g = 10 pulsed fig.2 switching characteristics t r t f t d (off) t d (on) 012345678 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 9 10 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 5a r g = 10 pulsed fig.3 dynamic input characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.01 0.1 1 10 gate-source voltage : v gs (v) drain current : i d (a) fig.4 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed 0246810121416 gate-source voltage : v gs (v) 0 50 100 150 200 250 300 static drain-sourceon-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 5a i d = 2.5a 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 10 drain current : i d (a) 1 10 100 1000 static drain-sourceon-state resistance : r ds (on) ( m ) fig.7 static drain-source on-state resistancevs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed 0.1 1 10 drain current : i d (a) 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed static drain-sourceon-state resistance : r ds (on) ( m ) fig.8 static drain-source on-state resistancevs. drain current ( ) 0.1 1 10 v gs = 4v pulsed 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c drain current : i d (a) static drain-sourceon-state resistance : r ds (on) ( m ) fig.9 static drain-source on-state resistancevs. drain current ( ) sp8m6fr a downloaded from: http:///
sp8m6 transistors rev.c 5/5 p-ch electrical characteristic curves fig.1 typical capacitance vs. drain-source voltage 10 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v c iss c rss c oss fig.2 switching characteristics 1 10 100 1000 0.01 0.1 1 10 drain current : ? i d (a) switching time : t (ns) ta = 25 c v dd = ? 15v v gs = ? 10v r g = 10 pulsed t d (off) t d (on) t r t f fig.3 dynamic input characteristics ta = 25 c v dd = ? 15v i d = ? 3.5a r g = 10 pulsed 012345678 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.4 typical transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = ? 10v pulsed 0246810121416 gate-source voltage : ? v gs (v) 0 50 100 150 200 250 300 350 400 static drain-sourceon-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d =? 3.5a i d =? 1.75a fig.6 source current vs. source-drain voltage 0.0 0.5 1.0 1.5 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 source current : ? i s (a) v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c fig.7 static drain-source on-state resistancevs. drain current ( ) v gs = ? 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c drain current : ? i d (a) static drain-sourceon-state resistance : r ds (on) ( m ) 0.1 1 10 10 100 1000 fig.8 static drain-source on-state resistancevs. drain current ( ) 0.1 1 10 10 100 1000 drain current : ? i d (a) static drain-sourceon-state resistance : r ds (on) ( m ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c fig.9 static drain-source on-state resistancevs. drain current ( ) 0.1 1 10 10 100 1000 v gs = ? 4v pulsed drain current : ? i d (a) static drain-sourceon-state resistance : r ds (on) ( m ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c sp8m6fr a downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. if you intend to use our products in devices requiring extreme ly high reliability (such as medical equipment (note 1) , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life , bodily injury or serious damage to property ( specific applications ), please consult with the rohm sales representative in advance. unless otherwise agreed in writin g by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any rohm s products for specific applications. (note1) medical equipment classification of the specific applic ations japan usa eu china class class class b class class ? class 2. rohm designs and manufactures its products subject to stri ct quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adeq uate safety measures including but not limited to fail-safe desig n against the physical injury, damage to any property, whic h a failure or malfunction of our products may cause. the followi ng are examples of safety measures: [a] installation of protection circuits or other protective devic es to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are no t designed under any special or extraordinary environments or conditions, as exemplified below . accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or c onditions (as exemplified below), your independent verification and confirmation of product performance, reliabil ity, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, including water, oils, chemicals, and organi c solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products are e xposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed t o static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing component s, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subject to radiation-proof design. 5. please verify and confirm characteristics of the final or mou nted products in using the products. 6 . in particular, if a transient load (a large amount of load appl ied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mou nting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating u nder steady-state loading condition may negatively affec t product performance and reliability. 7. de -rate power dissipation depending on ambient temperature. wh en used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range desc ribed in the product specification. 9 . rohm shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc .) flux is used, the residue of flux may negatively affect prod uct performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mus t be used on a through hole mount products. i f the flow soldering method is preferred on a surface-mount p roducts, please consult with th e rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, p lease allow a sufficient margin considering variations o f the characteristics of the products and external components, inc luding transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and a ssociated data and information contain ed in this document are presented only as guidance for products use. therefore, i n case you use such information, you are solely responsible for it and you must exercise your own independ ent verification and judgment in the use of such information contained in this document. rohm shall not be in any way respon sible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such informat ion. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take p roper caution in your manufacturing process and storage so t hat voltage exceeding the products maximum rating will not be applied to products. please take special care under dry co ndition (e.g. grounding of human body / equipment / solder iro n, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate if the products are stored in the places where: [a] the products are exposed to sea winds or corrosive gases, in cluding cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderabil ity of products out of recommended storage time period may be degraded. it is strongly recommended to confirm so lderability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indi cated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humi dity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage tim e period. precaution for product label a two-dimensional barcode printed on rohm products label is f or rohm s internal use only. precaution for disposition when disposing products please dispose them properly usi ng an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to appl ication example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, a ctions or demands arising from the combination of the products with other articles such as components, circuits, systems or ex ternal equipment (including software). 3. no license, expressly or implied, is granted hereby under any inte llectual property rights or other rights of rohm or any third parties with respect to the products or the information contai ned in this document. provided, however, that rohm will not assert its intellectual property rights or other rights a gainst you or your customers to the extent necessary to manufacture or sell products containing the products, subject to th e terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in p art, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified , reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any way whatsoever the pr oducts and the related technical information contained in the products or this document for any military purposes, includi ng but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
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